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RF FETs AFT18P350-4S2LR6
NXP
AFT18P350-4S2LR6
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveNo
PCB changed7
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width10.29(Max)
Package Height4.83(Max)
Package Length32.39(Max)
Output Power (W)63(Typ)
Supplier PackageNI-1230
Maximum IDSS (uA)10
Mode of Operation1-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)1880
Minimum Frequency (MHz)1805
Typical Power Gain (dB)16.1
Number of Elements per Chip2
Typical Drain Efficiency (%)44.5
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-40
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF MOSFET N-CH 65V 7-Pin NI-1230 T/R
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