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AFT21S232SR3
AFT21S232SR3
RF FETs AFT21S232SR3
NXP
AFT21S232SR3
--
Diodes, Transistors and Thyristors
RF FETs
AFT21S232SR3.pdf
Specification
Product AttributeAttribute Value
HTS8541290095
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.91(Max)
Package Height4.32(Max)
Package Length20.7(Max)
Output Power (W)50(Typ)
Supplier PackageNI-780S
Maximum IDSS (uA)10
Mode of Operation1-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)2170
Minimum Frequency (MHz)2110
Typical Power Gain (dB)16.7
Number of Elements per Chip1
Typical Drain Efficiency (%)30.5
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R
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