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AFT27S010NT1
AFT27S010NT1
RF FETs AFT27S010NT1
NXP
AFT27S010NT1
--
Diodes, Transistors and Thyristors
RF FETs
AFT27S010NT1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR5
ConfigurationSingle
Package Width5.97(Max)
Package Height1.83(Max)
Package Length6.73(Max)
Output Power (W)1.26(Typ)
Supplier PackagePLD-1.5W
Maximum IDSS (uA)10
Mode of Operation1-Carrier W-CDMA
Process TechnologyLDMOS
Standard Package NamePLD-1.5W
Maximum Frequency (MHz)3600
Minimum Frequency (MHz)728
Typical Power Gain (dB)21.7
Number of Elements per Chip1
Typical Drain Efficiency (%)21.5
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)1.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF FET N-CH 65V 3-Pin PLD-1.5W T/R
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