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BF1203,115
BF1203,115
RF FETs BF1203,115
NXP
BF1203,115
--
Diodes, Transistors and Thyristors
RF FETs
BF1203,115.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Gate
Package Width1.35(Max)
Package Height1(Max)
Package Length2.2(Max)
Supplier PackageTSSOP
Standard Package NameSOP
Typical Power Gain (dB)32.5@Amp A|34@Amp B
Number of Elements per Chip2
Maximum Power Dissipation (mW)200
Maximum Gate Source Voltage (V)6
Maximum Drain Source Voltage (V)10
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)0.03
Typical Input Capacitance @ Vds (pF)2.6@5V@Gate 1|3@5V@Gate 2
Typical Output Capacitance @ Vds (pF)0.9@5V@Amp A|0.85@5V@Amp B
Typical Reverse Transfer Capacitance @ Vds (pF)0.015@5V
Description
Trans RF MOSFET N-CH 10V 0.03A 6-Pin TSSOP T/R
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