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BF1212,215
BF1212,215
RF FETs BF1212,215
NXP
BF1212,215
--
Diodes, Transistors and Thyristors
RF FETs
BF1212,215.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width1.4(Max)
Package Height1(Max)
Package Length3(Max)
Supplier PackageSOT-143B
Typical Power Gain (dB)35
Number of Elements per Chip2
Maximum Power Dissipation (mW)180
Maximum Gate Source Voltage (V)6
Maximum Drain Source Voltage (V)6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)0.03
Typical Input Capacitance @ Vds (pF)1.7@5V@Gate 1|1.1@5V@Gate 2
Typical Output Capacitance @ Vds (pF)0.9@5V
Typical Reverse Transfer Capacitance @ Vds (pF)0.015@5V
Description
Trans RF MOSFET N-CH 6V 0.03A 4-Pin(3+Tab) SOT-143B T/R
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