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A2T23H200W23SR6
A2T23H200W23SR6
RF FETs A2T23H200W23SR6
NXP
A2T23H200W23SR6
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeMOSFET
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count6
AutomotiveNo
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
Package Width10.29(Max)
Package Height4.83(Max)
Package Length32.39(Max)
Output Power (W)51(Typ)
Mode of Operation1-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)2400
Minimum Frequency (MHz)2300
Typical Power Gain (dB)15.5
Typical Drain Efficiency (%)50.7
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Description
Trans RF FET N-CH 65V 6-Pin T/R
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