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BF966S
BF966S
RF FETs BF966S
Vishay
BF966S
--
Diodes, Transistors and Thyristors
RF FETs
BF966S.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count4
AutomotiveNo
PCB changed4
Part StatusObsolete
Channel ModeDepletion
Channel TypeN
ConfigurationSingle Dual Gate
Package Width4.8
Package Height2.5
Package Length4.8
Supplier PackageTO-50
Typical Power Gain (dB)25
Number of Elements per Chip1
Maximum Power Dissipation (mW)200
Maximum Gate Source Voltage (V)±8
Maximum Drain Source Voltage (V)20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.03
Typical Forward Transconductance (S)0.0185
Typical Input Capacitance @ Vds (pF)2.2@15V@Gate 1|1.1@15V@Gate 2
Typical Output Capacitance @ Vds (pF)0.8@15V
Typical Reverse Transfer Capacitance @ Vds (pF)0.025@15V
Description
Trans RF MOSFET N-CH 20V 0.03A 4-Pin TO-50
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