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MMRF1304LR5
MMRF1304LR5
RF FETs MMRF1304LR5
NXP
MMRF1304LR5
--
Diodes, Transistors and Thyristors
RF FETs
MMRF1304LR5.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
ConfigurationSingle
Package Width5.92(Max)
Package Height4.45(Max)
Package Length20.45(Max)
Output Power (W)25(Typ)
Supplier PackageNI-360
Maximum IDSS (uA)7
Mode of OperationPulse
Process TechnologyLDMOS
Maximum Frequency (MHz)2000
Minimum Frequency (MHz)1.8
Typical Power Gain (dB)25.9
Number of Elements per Chip1
Typical Drain Efficiency (%)74
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)133
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Input Capacitance @ Vds (pF)39@50V
Typical Output Capacitance @ Vds (pF)14.7@50V
Maximum Gate Source Leakage Current (nA)400
Typical Reverse Transfer Capacitance @ Vds (pF)0.17@50V
Description
Trans RF FET N-CH 133V 3-Pin NI-360 T/R
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