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RF FETs BF998RE6327HTSA1
Infineon
BF998RE6327HTSA1
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Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| Type | MOSFET |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Type | N |
| Configuration | Single Dual Gate |
| Package Width | 1.3 |
| Package Height | 1(Max) |
| Package Length | 2.9 |
| Supplier Package | SOT-143R |
| Maximum IDSS (uA) | 15000 |
| Standard Package Name | SOT-143R |
| Maximum Frequency (MHz) | 1000 |
| Typical Power Gain (dB) | 28 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 200 |
| Maximum Gate Source Voltage (V) | ±8 |
| Maximum Drain Source Voltage (V) | 12 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.03 |
| Typical Forward Transconductance (S) | 0.024 |
| Typical Input Capacitance @ Vds (pF) | 1.2@8V@Gate 2|2.1@8V@Gate 1 |
| Typical Output Capacitance @ Vds (pF) | 1.1@8V |
| Maximum Gate Source Leakage Current (nA) | 50 |
| Description |
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