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RF FETs BLA0912-250,112
NXP
BLA0912-250,112
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Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Supplier Unconfirmed |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Bulk |
| Pin Count | 3 |
| Automotive | Unknown |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 5 |
| Configuration | Single |
| Package Width | 9.91(Max) |
| Package Height | 4.72(Max) |
| Package Length | 34.16(Max) |
| Output Power (W) | 250(Min) |
| Supplier Package | SOT-502A |
| Mode of Operation | Class AB |
| Process Technology | LDMOS |
| Typical Fall Time (ns) | 6 |
| Typical Rise Time (ns) | 25 |
| Maximum Frequency (MHz) | 1215 |
| Minimum Frequency (MHz) | 960 |
| Typical Power Gain (dB) | 13 |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 50 |
| Maximum Power Dissipation (mW) | 700000 |
| Maximum Gate Source Voltage (V) | ±22 |
| Maximum Drain Source Voltage (V) | 75 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Typical Forward Transconductance (S) | 9 |
| Maximum Drain Source Resistance (mOhm) | 60(Typ)@9V |
| Description |
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