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RF FETs STAC4932F1MR
STMicroelectronics
STAC4932F1MR
--
Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | MOSFET |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Box |
| Pin Count | 4 |
| Automotive | No |
| PCB changed | 4 |
| Part Status | Active |
| Channel Type | N |
| Configuration | Dual Common Source |
| Package Width | 9.91(Max) |
| Package Height | 3.86(Max) |
| Package Length | 20.7(Max) |
| Output Power (W) | 450(Typ) |
| Supplier Package | STAC780F |
| Maximum IDSS (uA) | 1000 |
| Process Technology | DMOS |
| Maximum Frequency (MHz) | 250 |
| Typical Power Gain (dB) | 24 |
| Number of Elements per Chip | 2 |
| Typical Drain Efficiency (%) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Voltage (V) | 200 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Typical Forward Transconductance (S) | 3(Min) |
| Typical Input Capacitance @ Vds (pF) | 580@50V |
| Typical Output Capacitance @ Vds (pF) | 180@50V |
| Maximum Gate Source Leakage Current (nA) | 250 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 10@50V |
| Description |
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