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BLA1011-200R,112
BLA1011-200R,112
RF FETs BLA1011-200R,112
NXP
BLA1011-200R,112
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Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingBulk
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR5
ConfigurationSingle
Package Width9.91(Max)
Package Height4.72(Max)
Package Length34.16(Max)
Output Power (W)250(Typ)
Supplier PackageSOT-502A
Mode of OperationPulsed RF Class-AB
Process TechnologyLDMOS
Typical Fall Time (ns)6
Typical Rise Time (ns)35
Maximum Frequency (MHz)1090
Minimum Frequency (MHz)1030
Typical Power Gain (dB)15
Number of Elements per Chip1
Typical Drain Efficiency (%)50
Maximum Power Dissipation (mW)700000
Maximum Gate Source Voltage (V)±22
Maximum Drain Source Voltage (V)75
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Forward Transconductance (S)9
Maximum Drain Source Resistance (mOhm)60(Typ)@9V
Description
Trans RF MOSFET N-CH 75V 3-Pin SOT-502A
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