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RF FETs BLF246B,112
NXP
BLF246B,112
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Diodes, Transistors and Thyristors
RF FETs
BLF246B,112.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSSupplier Unconfirmed
MountingScrew
ECCN (US)EAR99
PackagingBlister
Pin Count8
AutomotiveUnknown
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR50
ConfigurationDual Common Source
Package Width16.81(Max)
Package Height7.27(Max)
Package Length24.97(Max)
Output Power (W)60(Typ)
Supplier PackageCDFM
Mode of OperationCW Class-B
Maximum Frequency (MHz)175
Minimum Frequency (MHz)25
Typical Power Gain (dB)19
Number of Elements per Chip2
Typical Drain Efficiency (%)65
Maximum Power Dissipation (mW)130000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)8
Typical Forward Transconductance (S)1.8
Typical Input Capacitance @ Vds (pF)125@28V
Typical Output Capacitance @ Vds (pF)75@28V
Maximum Drain Source Resistance (mOhm)750@10V
Typical Reverse Transfer Capacitance @ Vds (pF)11@28V
Description
Trans RF FET N-CH 65V 8A 8-Pin CDFM Blister
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