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BLD6G22L-50
BLD6G22L-50
RF FETs BLD6G22L-50
NXP
BLD6G22L-50
--
Diodes, Transistors and Thyristors
RF FETs
BLD6G22L-50.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count5
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual
Package Width9.91(Max)
Package Height4.65(Max)
Package Length20.45(Max)
Output Power (W)8(Typ)
Supplier PackageCDFM
Mode of OperationW-CDMA
Maximum Frequency (MHz)2170
Minimum Frequency (MHz)2110
Typical Power Gain (dB)14
Number of Elements per Chip2
Typical Drain Efficiency (%)40
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)10.2
Maximum Drain Source Resistance (mOhm)736@6.15V
Description
Trans RF MOSFET N-CH 65V 10.2A 5-Pin CDFM
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