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LET9180
LET9180
RF FETs LET9180
STMicroelectronics
LET9180
--
Diodes, Transistors and Thyristors
RF FETs
LET9180.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingLoose
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
ConfigurationDual Common Source
Package Width5.97(Max)
Package Height5.08(Max)
Package Length29.08(Max)
Output Power (W)175(Typ)
Supplier PackageCase M-246
Maximum IDSS (uA)1
Process TechnologyLDMOS
Maximum Frequency (MHz)2000
Typical Power Gain (dB)20
Number of Elements per Chip2
Typical Drain Efficiency (%)69
Maximum Power Dissipation (mW)318000
Maximum Gate Source Voltage (V)15
Maximum Drain Source Voltage (V)80
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)24
Typical Forward Transconductance (S)2.5(Min)
Typical Input Capacitance @ Vds (pF)70@32V
Typical Output Capacitance @ Vds (pF)36@32V
Maximum Gate Source Leakage Current (nA)1000
Typical Reverse Transfer Capacitance @ Vds (pF)0.9@32V
Description
Trans RF MOSFET N-CH 80V 24A 5-Pin Case M-246 Loose
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