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BLF178XR
BLF178XR
RF FETs BLF178XR
NXP
BLF178XR
--
Diodes, Transistors and Thyristors
RF FETs
BLF178XR.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count5
PCB changed5
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65(Min)
ConfigurationDual Common Source
Package Width10.29(Max)
Package Height4.7(Max)
Package Length41.28(Max)
Output Power (W)1400(Typ)
Supplier PackageSOT-539A
Maximum IDSS (uA)2.8
Mode of OperationPulsed RF|CW
Process TechnologyLDMOS
Maximum Frequency (MHz)128
Minimum Frequency (MHz)10
Typical Power Gain (dB)23|28
Number of Elements per Chip2
Typical Drain Efficiency (%)72
Maximum Gate Source Voltage (V)11
Maximum Drain Source Voltage (V)110
Maximum Gate Threshold Voltage (V)2.25
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)414@50V
Typical Output Capacitance @ Vds (pF)184@50V
Maximum Drain Source Resistance (mOhm)70(Typ)@6V
Maximum Gate Source Leakage Current (nA)280
Typical Reverse Transfer Capacitance @ Vds (pF)5.5@50V
Description
Trans RF FET N-CH 110V 5-Pin SOT-539A
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