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MMRF1305HR5
MMRF1305HR5
RF FETs MMRF1305HR5
NXP
MMRF1305HR5
--
Diodes, Transistors and Thyristors
RF FETs
MMRF1305HR5.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
ConfigurationDual Common Source
Package Width9.91(Max)
Package Height4.32(Max)
Package Length34.16(Max)
Output Power (W)100(Typ)
Supplier PackageNI-780
Maximum IDSS (uA)10
Mode of OperationPulse
Process TechnologyLDMOS
Maximum Frequency (MHz)2000
Minimum Frequency (MHz)1.8
Typical Power Gain (dB)26
Number of Elements per Chip2
Typical Drain Efficiency (%)70
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)133
Maximum Gate Threshold Voltage (V)2.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Input Capacitance @ Vds (pF)73.6@50V
Typical Output Capacitance @ Vds (pF)23.9@50V
Maximum Gate Source Leakage Current (nA)400
Typical Reverse Transfer Capacitance @ Vds (pF)0.24@50V
Description
Trans RF FET N-CH 133V 5-Pin NI-780 T/R
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