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BLF248,112
BLF248,112
RF FETs BLF248,112
NXP
BLF248,112
--
Diodes, Transistors and Thyristors
RF FETs
BLF248,112.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSSupplier Unconfirmed
MountingScrew
ECCN (US)EAR99
Pin Count5
AutomotiveUnknown
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR50
ConfigurationDual Common Source
Package Width10.29(Max)
Package Height5.77(Max)
Package Length34.17(Max)
Output Power (W)300
Supplier PackageCDFM
Mode of OperationClass AB
Maximum Frequency (MHz)225
Minimum Frequency (MHz)10
Typical Power Gain (dB)13
Number of Elements per Chip2
Typical Drain Efficiency (%)67
Maximum Power Dissipation (mW)500000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)25
Typical Input Capacitance @ Vds (pF)500@28V
Typical Output Capacitance @ Vds (pF)360@28V
Maximum Drain Source Resistance (mOhm)150@10V
Typical Reverse Transfer Capacitance @ Vds (pF)46@28V
Description
Trans RF FET N-CH 65V 25A 5-Pin CDFM Bulk
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