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BLF6G27-100,112
BLF6G27-100,112
RF FETs BLF6G27-100,112
NXP
BLF6G27-100,112
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Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPUnknown
MountingScrew
ECCN (US)EAR99
PackagingBlister
Pin Count3
AutomotiveUnknown
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.91(Max)
Package Height4.72(Max)
Package Length34.16(Max)
Output Power (W)14(Typ)
Supplier PackageSOT-502A
Mode of Operation1-Carrier N-CDMA|1-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)2700
Minimum Frequency (MHz)2500
Typical Power Gain (dB)16.5
Number of Elements per Chip1
Typical Drain Efficiency (%)23
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)29
Typical Forward Transconductance (S)10.5
Maximum Drain Source Resistance (mOhm)160@6.15V
Typical Reverse Transfer Capacitance @ Vds (pF)2.4@28V
Description
Trans RF FET N-CH 65V 29A 3-Pin SOT-502A Blister
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