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RF FETs BLF3G22-30,112
NXP
BLF3G22-30,112
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Diodes, Transistors and Thyristors
RF FETs
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Supplier Unconfirmed |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Bulk |
| Pin Count | 3 |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum VSWR | 10 |
| Configuration | Single |
| Package Width | 10.29(Max) |
| Package Height | 4.62(Max) |
| Package Length | 20.45(Max) |
| Output Power (W) | 6(Typ) |
| Supplier Package | CDFM |
| Mode of Operation | 2-Tone CW|2-Tone W-CDMA |
| Process Technology | LDMOS |
| Maximum Frequency (MHz) | 2200 |
| Minimum Frequency (MHz) | 2000 |
| Typical Power Gain (dB) | 15 |
| Number of Elements per Chip | 1 |
| Typical Drain Efficiency (%) | 24 |
| Maximum Gate Source Voltage (V) | ±15 |
| Maximum Drain Source Voltage (V) | 65 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 4.5 |
| Typical Forward Transconductance (S) | 3 |
| Maximum Drain Source Resistance (mOhm) | 300(Typ) |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 1.7@26V |
| Description |
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