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BLP7G22-10
BLP7G22-10
RF FETs BLP7G22-10
NXP
BLP7G22-10
--
Diodes, Transistors and Thyristors
RF FETs
BLP7G22-10.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count12
PCB changed12
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width4
Package Height0.82
Package Length6
Output Power (W)2(Typ)
Supplier PackageHVSON EP
Maximum IDSS (uA)1.4
Mode of Operation2-Carrier W-CDMA|Pulsed CW|1-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)2700
Minimum Frequency (MHz)700
Typical Power Gain (dB)16
Number of Elements per Chip1
Typical Drain Efficiency (%)23
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)2.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Forward Transconductance (S)0.16
Maximum Drain Source Resistance (mOhm)1000(Typ)@6.05V
Maximum Gate Source Leakage Current (nA)140
Description
Trans RF MOSFET N-CH 65V 12-Pin HVSON EP
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