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BLF645,112
BLF645,112
RF FETs BLF645,112
NXP
BLF645,112
--
Diodes, Transistors and Thyristors
RF FETs
BLF645,112.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingBulk
Pin Count5
AutomotiveUnknown
PCB changed5
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width10.91(Max)
Package Height5.77(Max)
Package Length34.16(Max)
Output Power (W)100(Typ)
Supplier PackageLDMOST
Mode of Operation2-Tone Class-AB|CW Class-AB
Process TechnologyLDMOS
Maximum Frequency (MHz)1300
Minimum Frequency (MHz)1
Typical Power Gain (dB)18
Number of Elements per Chip2
Typical Drain Efficiency (%)56
Maximum Gate Source Voltage (V)11
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)32
Typical Forward Transconductance (S)6.4
Typical Input Capacitance @ Vds (pF)69@32V
Typical Output Capacitance @ Vds (pF)25@32V
Maximum Drain Source Resistance (mOhm)220(Typ)@6.15V
Typical Reverse Transfer Capacitance @ Vds (pF)1.2@32V
Description
Trans RF FET N-CH 65V 32A 5-Pin LDMOST Bulk
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