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BLL6H1214-500
BLL6H1214-500
RF FETs BLL6H1214-500
NXP
BLL6H1214-500
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count5
AutomotiveUnknown
PCB changed5
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width10.29(Max)
Package Height4.7(Max)
Package Length41.28(Max)
Output Power (W)500(Min)
Supplier PackageSOT-539A
Maximum IDSS (uA)1.4
Mode of OperationPulsed RF
Process TechnologyLDMOS
Typical Fall Time (ns)6
Typical Rise Time (ns)20
Maximum Frequency (MHz)1400
Minimum Frequency (MHz)1200
Typical Power Gain (dB)17
Number of Elements per Chip2
Typical Drain Efficiency (%)50
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)100
Maximum Gate Threshold Voltage (V)2.2
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)45
Typical Forward Transconductance (S)3
Maximum Drain Source Resistance (MOhm)164@5.95V
Maximum Gate Source Leakage Current (nA)140
Description
Trans RF MOSFET N-CH 100V 45A 5-Pin SOT-539A
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