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BLF6G22LS-130
BLF6G22LS-130
RF FETs BLF6G22LS-130
NXP
BLF6G22LS-130
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPUnknown
TypeMOSFET
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveUnknown
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.91(Max)
Package Height4.72(Max)
Package Length20.7(Max)
Output Power (W)30(Typ)
Supplier PackageSOT-502B
Maximum IDSS (uA)5
Mode of Operation2-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)2170
Minimum Frequency (MHz)2110
Typical Power Gain (dB)17
Number of Elements per Chip1
Typical Drain Efficiency (%)28.5
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)2.4
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)34
Typical Forward Transconductance (S)12
Maximum Drain Source Resistance (mOhm)135@6.15V
Maximum Gate Source Leakage Current (nA)450
Typical Reverse Transfer Capacitance @ Vds (pF)3.15@28V
Description
Trans RF MOSFET N-CH 65V 34A 3-Pin SOT-502B
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