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MRF6S19100HR3
MRF6S19100HR3
RF FETs MRF6S19100HR3
NXP
MRF6S19100HR3
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.91(Max)
Package Height4.32(Max)
Package Length34.16(Max)
Output Power (W)100
Supplier PackageNI-780
Mode of Operation2-Carrier N-CDMA|CDMA|TDMA
Maximum Frequency (MHz)1990
Minimum Frequency (MHz)1930
Typical Power Gain (dB)16.1
Number of Elements per Chip1
Typical Drain Efficiency (%)28
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)68
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Reverse Transfer Capacitance @ Vds (pF)1.5@28V
Description
Trans RF FET N-CH 68V 3-Pin NI-780 T/R
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