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RF FETs BLF6G10LS-160,112
NXP
BLF6G10LS-160,112
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Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPUnknown
MountingSurface Mount
ECCN (US)EAR99
PackagingBlister
Pin Count3
AutomotiveUnknown
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.91(Max)
Package Height4.72(Max)
Package Length20.7(Max)
Output Power (W)32(Typ)
Supplier PackageSOT-502B
Maximum IDSS (uA)5
Mode of Operation2-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)1000
Minimum Frequency (MHz)800
Typical Power Gain (dB)22
Number of Elements per Chip1
Typical Drain Efficiency (%)27
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)2.4
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)39
Typical Forward Transconductance (S)13.5
Maximum Drain Source Resistance (mOhm)70(Typ)@6.15V
Maximum Gate Source Leakage Current (nA)450
Typical Reverse Transfer Capacitance @ Vds (pF)4.2@32V
Description
Trans RF FET N-CH 65V 39A 3-Pin SOT-502B Blister
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