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BLF871,112
BLF871,112
RF FETs BLF871,112
NXP
BLF871,112
--
Diodes, Transistors and Thyristors
RF FETs
BLF871,112.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingBulk
Pin Count3
AutomotiveUnknown
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width5.97(Max)
Package Height4.67(Max)
Package Length20.45(Max)
Output Power (W)100(Typ)
Supplier PackageLDMOST
Mode of Operation2-Tone Class-AB|CW Class-AB|DVB-T
Process TechnologyLDMOS
Maximum Frequency (MHz)1000
Minimum Frequency (MHz)1
Typical Power Gain (dB)21|22
Number of Elements per Chip1
Typical Drain Efficiency (%)60
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)89
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)95@40V
Typical Output Capacitance @ Vds (pF)30@40V
Maximum Drain Source Resistance (mOhm)210(Typ)@6.15V
Typical Reverse Transfer Capacitance @ Vds (pF)1@40V
Description
Trans RF FET N-CH 89V 3-Pin LDMOST Bulk
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