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RF FETs BLF872,112
NXP
BLF872,112
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Diodes, Transistors and Thyristors
RF FETs
BLF872,112.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
MountingScrew
ECCN (US)EAR99
PackagingBlister
Pin Count5
AutomotiveUnknown
PCB changed5
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width15.4
Package Height6.3
Package Length44.5
Output Power (W)70
Supplier PackageLDMOST
Mode of Operation2-Tone Class-AB|CW Class-AB|DVB-T|PAL BG
Process TechnologyLDMOS
Maximum Frequency (MHz)860
Minimum Frequency (MHz)470
Typical Power Gain (dB)15|14
Number of Elements per Chip2
Typical Drain Efficiency (%)55(Max)
Maximum Gate Source Voltage (V)±13
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Forward Transconductance (S)10
Typical Input Capacitance @ Vds (pF)200@32V
Typical Output Capacitance @ Vds (pF)70@32V
Maximum Drain Source Resistance (mOhm)80(Typ)@12.2V
Typical Reverse Transfer Capacitance @ Vds (pF)2.5@32V
Description
Trans RF FET N-CH 65V 5-Pin LDMOST Blister
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