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MMRF1317HR5
MMRF1317HR5
RF FETs MMRF1317HR5
NXP
MMRF1317HR5
--
Diodes, Transistors and Thyristors
RF FETs
MMRF1317HR5.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width10.29(Max)
Package Height4.83(Max)
Package Length41.28(Max)
Output Power (W)1300(Typ)
Supplier PackageNI-1230H
Maximum IDSS (uA)10
Mode of OperationPulse
Process TechnologyLDMOS
Maximum Frequency (MHz)1100
Minimum Frequency (MHz)1020
Typical Power Gain (dB)18.2
Number of Elements per Chip2
Typical Drain Efficiency (%)58.1
Maximum Power Dissipation (mW)869000
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)105
Maximum Gate Threshold Voltage (V)2.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Typical Reverse Transfer Capacitance @ Vds (pF)2.43@50V
Description
Trans RF FET N-CH 105V 5-Pin NI-1230H T/R
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