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F180101SV1XT
F180101SV1XT
RF FETs F180101SV1XT
Infineon
F180101SV1XT
--
Diodes, Transistors and Thyristors
RF FETs
F180101SV1XT.pdf
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width6.86
Package Height2.88
Package Length7.37
Output Power (W)10
Supplier PackageCase 32259
Maximum IDSS (uA)1
Mode of Operation2-Tone|CW|EDGE|W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)2170
Minimum Frequency (MHz)1805
Typical Power Gain (dB)19
Number of Elements per Chip1
Typical Drain Efficiency (%)37
Maximum Power Dissipation (mW)58000
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-40
Maximum Drain Source Resistance (MOhm)830(Typ)@10V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF MOSFET N-CH 65V 3-Pin Case 32259 T/R
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