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SD2932IW
SD2932IW
RF FETs SD2932IW
STMicroelectronics
SD2932IW
--
Diodes, Transistors and Thyristors
RF FETs
SD2932IW.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTube
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR5(Min)
ConfigurationDual Common Source
Package Width10.34(Max)
Package Height5.84(Max)
Package Length34.16(Max)
Output Power (W)300(Min)
Supplier PackageCase M-244
Maximum Frequency (MHz)250
Typical Power Gain (dB)16
Number of Elements per Chip2
Typical Drain Efficiency (%)60
Maximum Power Dissipation (mW)500000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)125
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)40
Typical Forward Transconductance (S)5(Min)
Typical Input Capacitance @ Vds (pF)480@50V
Typical Output Capacitance @ Vds (pF)190@50V
Typical Reverse Transfer Capacitance @ Vds (pF)18@50V
Description
Trans RF FET N-CH 125V 40A 5-Pin Case M-244 Tube
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