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LET9150
LET9150
RF FETs LET9150
STMicroelectronics
LET9150
--
Diodes, Transistors and Thyristors
RF FETs
LET9150.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingLoose
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR20
ConfigurationDual Common Source
Package Width5.97(Max)
Package Height5.08(Max)
Package Length29.08(Max)
Output Power (W)175(Typ)
Supplier PackageCase M-246
Process TechnologyLDMOS
Maximum Frequency (MHz)2000
Typical Power Gain (dB)20
Supplier Temperature GradeIndustrial
Number of Elements per Chip2
Typical Drain Efficiency (%)69
Maximum Power Dissipation (mW)269000
Maximum Gate Source Voltage (V)15
Maximum Drain Source Voltage (V)80
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)20
Typical Forward Transconductance (S)2.5(Min)
Typical Input Capacitance @ Vds (pF)68@32V
Typical Output Capacitance @ Vds (pF)33@28V
Typical Reverse Transfer Capacitance @ Vds (pF)0.65@32V
Description
Trans RF MOSFET N-CH 80V 20A 5-Pin Case M-246 Loose
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