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PTFA091201EV4R250XTMA1
PTFA091201EV4R250XTMA1
RF FETs PTFA091201EV4R250XTMA1
Infineon
PTFA091201EV4R250XTMA1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.78
Package Height3.61
Package Length34.04
Output Power (W)120
Supplier PackageCase 36248
Mode of Operation2-Tone|EDGE
Process TechnologyLDMOS
Maximum Frequency (MHz)960
Minimum Frequency (MHz)920
Typical Power Gain (dB)19
Number of Elements per Chip1
Typical Drain Efficiency (%)48
Maximum Power Dissipation (mW)427000
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-40
Maximum Drain Source Resistance (mOhm)70(Typ)@10V
Description
Trans RF MOSFET N-CH 65V 3-Pin Case 36248 T/R
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