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RF FETs MHT1002GNR3
NXP
MHT1002GNR3
--
Diodes, Transistors and Thyristors
RF FETs
MHT1002GNR3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Part StatusObsolete
Output Power (W)350
Mode of OperationCW
Process TechnologyLDMOS
Maximum Frequency (MHz)915
Minimum Frequency (MHz)915
Typical Power Gain (dB)20.7
Description
RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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