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BLS2933-100,112
BLS2933-100,112
RF FETs BLS2933-100,112
NXP
BLS2933-100,112
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Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
EU RoHSSupplier Unconfirmed
MountingScrew
ECCN (US)3A001.b.3.a.3
PackagingBulk
Pin Count3
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10(Min)
ConfigurationSingle
Package Width9.91(Max)
Package Height4.72(Max)
Package Length34.16(Max)
Output Power (W)120(Typ)
Supplier PackageSOT-502A
Mode of OperationClass AB
Process TechnologyLDMOS
Typical Fall Time (ns)6
Typical Rise Time (ns)20
Maximum Frequency (MHz)3300
Minimum Frequency (MHz)2900
Typical Power Gain (dB)8
Number of Elements per Chip1
Typical Drain Efficiency (%)40
Maximum Gate Source Voltage (V)15
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)12
Typical Forward Transconductance (S)9
Maximum Drain Source Resistance (mOhm)90(Typ)
Typical Reverse Transfer Capacitance @ Vds (pF)2.8@28V
Description
Trans RF MOSFET N-CH 65V 12A 3-Pin SOT-502A
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