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MMRF1004GNR1
MMRF1004GNR1
RF FETs MMRF1004GNR1
NXP
MMRF1004GNR1
--
Diodes, Transistors and Thyristors
RF FETs
MMRF1004GNR1.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.75
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR5
ConfigurationSingle
Package Width5.97(Max)
Package Height2.08(Max)
Package Length9.7(Max)
Output Power (W)10(Typ)
Supplier PackageTO-270 GULL
Maximum IDSS (uA)10
Mode of Operation1-Carrier N-CDMA|2-Carrier W-CDMA|2-Tone|GSM EDGE
Process TechnologyLDMOS
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)2200
Minimum Frequency (MHz)1600
Typical Power Gain (dB)15.5|16
Number of Elements per Chip1
Typical Drain Efficiency (%)36
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)68
Maximum Gate Threshold Voltage (V)3.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)120@28V
Typical Output Capacitance @ Vds (pF)20@28V
Maximum Gate Source Leakage Current (nA)500000
Typical Reverse Transfer Capacitance @ Vds (pF)11.6@28V
Description
Trans RF FET N-CH 68V 3-Pin TO-270 GULL T/R
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