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MRFE6S9200HSR3
MRFE6S9200HSR3
RF FETs MRFE6S9200HSR3
NXP
MRFE6S9200HSR3
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width13.8(Max)
Package Height5.08(Max)
Package Length23.24(Max)
Output Power (W)58(Typ)
Supplier PackageNI-880S
Mode of Operation1-Carrier W-CDMA
Maximum Frequency (MHz)1000
Typical Power Gain (dB)21
Number of Elements per Chip1
Typical Drain Efficiency (%)35
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)66
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)557.27@28V
Typical Output Capacitance @ Vds (pF)74.61@28V
Typical Reverse Transfer Capacitance @ Vds (pF)2.41@28V
Description
Trans RF MOSFET N-CH 66V 3-Pin NI-880S T/R
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