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MMRF1006HR5
MMRF1006HR5
RF FETs MMRF1006HR5
NXP
MMRF1006HR5
--
Diodes, Transistors and Thyristors
RF FETs
MMRF1006HR5.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width10.29(Max)
Package Height4.83(Max)
Package Length41.28(Max)
Output Power (W)1000(Typ)
Supplier PackageNI-1230
Maximum IDSS (uA)100
Mode of OperationPulse
Process TechnologyLDMOS
Maximum Frequency (MHz)500
Minimum Frequency (MHz)10
Typical Power Gain (dB)20
Number of Elements per Chip2
Typical Drain Efficiency (%)64
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)120
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)506@50V
Typical Output Capacitance @ Vds (pF)147@50V
Maximum Gate Source Leakage Current (nA)10000
Typical Reverse Transfer Capacitance @ Vds (pF)3.3@50V
Description
Trans RF FET N-CH 120V 5-Pin NI-1230 T/R
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