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MRF6S18060NR1
MRF6S18060NR1
RF FETs MRF6S18060NR1
NXP
MRF6S18060NR1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeFlat
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR5
ConfigurationSingle Dual Drain Dual Gate
Package Width9.07(Max)
Package Height2.64(Max)
Package Length17.58(Max)
Output Power (W)60(Typ)
Supplier PackageTO-270 W
Mode of OperationGSM|GSM EDGE
Standard Package NameTO-270 W
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)2000
Minimum Frequency (MHz)1800
Typical Power Gain (dB)15|15.5
Number of Elements per Chip1
Typical Drain Efficiency (%)50
Maximum Power Dissipation (mW)216000
Maximum Gate Source Voltage (V)12
Maximum Drain Source Voltage (V)68
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Reverse Transfer Capacitance @ Vds (pF)1.5@26V
Description
Trans RF FET N-CH 68V 5-Pin TO-270 W T/R
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