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MRF101BN
MRF101BN
RF FETs MRF101BN
NXP
MRF101BN
--
Diodes, Transistors and Thyristors
RF FETs
MRF101BN.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeMOSFET
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
ConfigurationSingle
Package Width4.83(Max)
Package Height8.39(Min)
Package Length10.47(Max)
Output Power (W)115(Typ)
Supplier PackageTO-220
Maximum IDSS (uA)10
Mode of OperationCW
Process TechnologyLDMOS
Maximum Frequency (MHz)250
Typical Power Gain (dB)21.1
Number of Elements per Chip1
Typical Drain Efficiency (%)76.7
Maximum Power Dissipation (mW)182000
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)133
Maximum Gate Threshold Voltage (V)2.7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Forward Transconductance (S)7.1
Typical Input Capacitance @ Vds (pF)149@50V
Typical Output Capacitance @ Vds (pF)43.4@50V
Maximum Gate Source Leakage Current (nA)1000
Typical Reverse Transfer Capacitance @ Vds (pF)0.96@50V
Description
Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-220 Tube
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