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MRF300BN
MRF300BN
RF FETs MRF300BN
NXP
MRF300BN
--
Diodes, Transistors and Thyristors
RF FETs
MRF300BN.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeMOSFET
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR65
ConfigurationSingle
Package Width5.21(Max)
Package Height21.11(Max)
Package Length16.13(Max)
Output Power (W)330(Typ)
Supplier PackageTO-247
Mode of OperationCW
Process TechnologyLDMOS
Maximum Frequency (MHz)250
Minimum Frequency (MHz)1.8
Typical Power Gain (dB)28.2
Number of Elements per Chip1
Typical Drain Efficiency (%)75.5
Maximum Power Dissipation (mW)272000
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)133
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Typical Forward Transconductance (S)28
Typical Input Capacitance @ Vds (pF)403@50V
Typical Output Capacitance @ Vds (pF)104@50V
Typical Reverse Transfer Capacitance @ Vds (pF)2.31@50V
Description
Trans RF FET N-CH 133V 3-Pin(3+Tab) TO-247 Tube
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