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MRF5S9080NBR1
MRF5S9080NBR1
RF FETs MRF5S9080NBR1
NXP
MRF5S9080NBR1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeFlat
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle Dual Drain Dual Gate
Package Width9.07(Max)
Package Height2.64(Max)
Package Length23.67(Max)
Output Power (W)80
Supplier PackageTO-272 W
Mode of OperationGSM|GSM EDGE
Standard Package NameTO-272 W
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)960
Minimum Frequency (MHz)869
Typical Power Gain (dB)18.5|19
Number of Elements per Chip1
Typical Drain Efficiency (%)42
Maximum Gate Source Voltage (V)15
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Output Capacitance @ Vds (pF)600@26V
Typical Reverse Transfer Capacitance @ Vds (pF)1.8@26V
Description
Trans RF FET N-CH 65V 5-Pin TO-272 W T/R
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