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RF FETs STAC1214-250
STMicroelectronics
STAC1214-250
--
Diodes, Transistors and Thyristors
RF FETs
STAC1214-250.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.91(Max)
Package Height5.33(Max)
Package Length34.19(Max)
Output Power (W)260(Typ)
Supplier PackageSTAC265B
Process TechnologyLDMOS
Maximum Frequency (MHz)1400
Minimum Frequency (MHz)1200
Typical Power Gain (dB)14
Number of Elements per Chip1
Typical Drain Efficiency (%)50(Min)
Maximum Power Dissipation (mW)928000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)80
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Typical Forward Transconductance (S)2.5(Min)
Description
Trans RF MOSFET N-CH 80V 3-Pin STAC265B Tube
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