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MRF6V2010NR1
MRF6V2010NR1
RF FETs MRF6V2010NR1
NXP
MRF6V2010NR1
--
Diodes, Transistors and Thyristors
RF FETs
MRF6V2010NR1.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.75
PPAPNo
SVHCYes
TypeMOSFET
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width6.15(Max)
Package Height2.08(Max)
Package Length9.7(Max)
Output Power (W)10(Typ)
Supplier PackageTO-270
Mode of OperationCW
Process TechnologyLDMOS
Standard Package NameTO-270
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)450
Minimum Frequency (MHz)10
Typical Power Gain (dB)23.9
Number of Elements per Chip1
Typical Drain Efficiency (%)62
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)110
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)16.3@50V
Typical Output Capacitance @ Vds (pF)7.3@50V
Typical Reverse Transfer Capacitance @ Vds (pF)0.13@50V
Description
Trans RF MOSFET N-CH 110V 3-Pin TO-270 T/R
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