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PTFC260202FCV1XWSA1
PTFC260202FCV1XWSA1
RF FETs PTFC260202FCV1XWSA1
Infineon
PTFC260202FCV1XWSA1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTray
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.78
Package Height3.76
Package Length20.57
Output Power (W)25
Supplier PackageCase H-37248
Maximum IDSS (uA)10
Mode of OperationCW
Process TechnologyLDMOS
Maximum Frequency (MHz)2700
Minimum Frequency (MHz)2300
Typical Power Gain (dB)20
Number of Elements per Chip1
Typical Drain Efficiency (%)30
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-40
Maximum Drain Source Resistance (mOhm)50(Typ)@10V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans RF MOSFET N-CH 65V 5-Pin Case H-37248 Tray
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