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MRF6V3090NBR1
MRF6V3090NBR1
RF FETs MRF6V3090NBR1
NXP
MRF6V3090NBR1
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.75
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeFlat
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width9.07(Max)
Package Height2.64(Max)
Package Length23.67(Max)
Output Power (W)18(Typ)
Supplier PackageTO-272 W
Mode of OperationDVB-T OFDM
Process TechnologyLDMOS
SVHC Exceeds ThresholdYes
Maximum Frequency (MHz)1215
Minimum Frequency (MHz)470
Typical Power Gain (dB)22
Number of Elements per Chip2
Typical Drain Efficiency (%)28.5
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)110
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)591@50V
Typical Output Capacitance @ Vds (pF)65.4@50V
Typical Reverse Transfer Capacitance @ Vds (pF)41@50V
Description
Trans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R
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