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STAC4933
STAC4933
RF FETs STAC4933
STMicroelectronics
STAC4933
--
Diodes, Transistors and Thyristors
RF FETs
STAC4933.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingLoose
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR25(Typ)
ConfigurationSingle Triple Source
Package Width15.27(Max)
Package Length28.96(Max)
Output Power (W)300(Min)
Supplier PackageSTAC177B
Maximum IDSS (uA)2000
Typical Power Gain (dB)24
Number of Elements per Chip1
Typical Drain Efficiency (%)58
Maximum Power Dissipation (mW)795000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)200
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)40
Typical Forward Transconductance (S)8
Typical Input Capacitance @ Vds (pF)1000@50V
Typical Output Capacitance @ Vds (pF)400@50V
Maximum Gate Source Leakage Current (nA)500
Typical Reverse Transfer Capacitance @ Vds (pF)16@50V
Description
Trans RF MOSFET N-CH 200V 40A 5-Pin STAC177B Loose
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