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MRF7S15100HSR3
MRF7S15100HSR3
RF FETs MRF7S15100HSR3
NXP
MRF7S15100HSR3
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationSingle
Package Width9.91(Max)
Package Height4.32(Max)
Package Length20.7(Max)
Output Power (W)100
Supplier PackageNI-780S
Mode of Operation1-Carrier W-CDMA
Maximum Frequency (MHz)1510
Minimum Frequency (MHz)1470
Typical Power Gain (dB)19.5
Number of Elements per Chip1
Typical Drain Efficiency (%)32
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Typical Input Capacitance @ Vds (pF)176@28V
Typical Output Capacitance @ Vds (pF)300@28V
Typical Reverse Transfer Capacitance @ Vds (pF)0.6@28V
Description
Trans RF FET N-CH 65V 3-Pin NI-780S T/R
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