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MRF8P20160HR3
MRF8P20160HR3
RF FETs MRF8P20160HR3
NXP
MRF8P20160HR3
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width9.91(Max)
Package Height4.32(Max)
Package Length34.16(Max)
Output Power (W)37(Typ)
Supplier PackageCase 465M-01
Mode of Operation1-Carrier W-CDMA
Process TechnologyLDMOS
Standard Package NameModule
Maximum Frequency (MHz)2025
Minimum Frequency (MHz)1880
Typical Power Gain (dB)16.5
Number of Elements per Chip2
Typical Drain Efficiency (%)45.8
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Description
Trans RF MOSFET N-CH 65V 5-Pin Case 465M-01 T/R
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