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MRF8P8300HSR6
MRF8P8300HSR6
RF FETs MRF8P8300HSR6
NXP
MRF8P8300HSR6
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width10.29(Max)
Package Height5.08(Max)
Package Length32.38(Max)
Output Power (W)96(Typ)
Supplier PackageCase 375E-04
Mode of Operation1-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)820
Minimum Frequency (MHz)790
Typical Power Gain (dB)20.9
Number of Elements per Chip2
Typical Drain Efficiency (%)35.7
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)70
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Description
Trans RF MOSFET N-CH 70V 5-Pin Case 375E-04 T/R
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